Technical Session E


RADECS 2021 - Technical Program

Friday, September 17, 2021 (starts at 10.30 h)

RADECS 2021 - Session E

Photonics, Optoelectronics & Sensors

Session Co-Chair:

Jochen Kuhnhenn, Fraunhofer INT
Serena Rizzolo, Airbus Defence and Space S.A.S.


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C. Campanella1, A. Morana1, A. Guttilla2, F. Mady3, M. Benabdesselam2, E. Marin1, A. Boukenter1, Y. Ouerdane1, S. Girard1

1 UJM, Laboratoire Hubert Curien, France
2 Université Côte d'Azur, Institut de Physique de Nice (INPHYNI), CNRS UMR 7010, France


We investigated in situ the temperature influence on the Radiation-lnduced Attenuation (RIA) of an Al-doped single-mode optical fiber in the Visible and Near-lnfraRed spectral regions (400 nm - 2 µm, room temperature to 300°C).

M. Aubry1,2,3,4, A. Morana1, A. Laurent2, L. Mescia3, J. Mekki4, N. Balcon4 , T. Robin2, E. Marin1, Y. Ouerdane1, A. Boukenter1, S. Girard1

1 UJM, Laboratoire Hubert Curien, France
2 iXblue Photonics, France
3 Politecnico di Bari, ltaly
4 CNES, France


We investigated how the photobleaching phenomenon could help in reducing the radiation impact on the performances of backup Erbium Doped Fiber Amplifiers (EDFAs) and Erbium­-Ytterbium Doped Fiber Amplifiers (EYDFA) .

R. Alchaar1, C. Bataillon1, J. Perez1, O. Gilard1, P. Christol1

1 Université de Montpellier, France


Electrical characterizations of T2SL IR photodetectors under 60 MeV proton fluence up to 8x1011 cm-2 were performed. Dark current increases with increasing the DDD independently of the cut-off wavelength and the number of T2SL periods.


V. Lalucaa1, L. Calvinhac1, C. Virmontois1

1 CNES, France


Irradiation effects are studied on commercial lnGaAs image sensors with hybrid direct Cu-Cu bonding. Performances, dark current and random telegraph signal are measured after 62MeV proton tests with different doses; and compared to existing models.


A. Antonsanti1, C. Virmontois2, J. Lauenstein3, A. Le Roch1, V. Goiffon1

2 CNES, France

Dark-Current Random Telegraph signal is studied after proton irradiation in new scale silicon micro-volumes using a commercial CMOS Image Sensor. State-of-the-art empirical trends and new scale effects are discussed.



Session Chair:

Steven Witczak, Northrop Grumman

M. Lalovic1, C. Scarcella1, A. Bulling1, M. Court1, S. Detraz1, L. Marcon1, L. Olantera1, T. Prousalidi1, U. Sandven1, C. Sigaud1, C. Soos1, J. Troska1

1 CERN, Switzerland


Two popular types of Silicon Photonics modulators have been exposed to ionizing radiation up to 4 MGy. Ring Modulators are shown to be the most tolerant, showing no degradation in performance up to these levels.


T. Allanche1, A. Morana1, P. Paillet2, O. Duhamel2, D. Lambert2, C. Hoehr3, C. Bélanger­-Champagne3, M. Trinczek3, C. Muller1, Y. Ouerdane1, A. Boukenter1, S. Girard1

1 UJM, Laboratoire Hubert Curien, France
2 CEA, France
3 TRIUMF, Canada


We performed at TRIUMF in-situ radiation induced attenuation measurements caused by protons in bulk optical glasses and compared them with gamma-rays effect. We used GEANT4 calculations to compute the right deposited for each glass.