Technical Session C


RADECS 2021 - Technical Program

Wednesday, September 15, 2021 (starts at 9.10 h)

RADECS 2021 - Session C

Single Event Effects: Mechanisms & Modelling

Session Co-Chair:

Adrian Ildefonso, U.S. Naval Research Laboratory
Arto Javanainen, University of Jyväskylä


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V. Wyrwoll1, K. Roed1, R. García Alía2, B. Delfs3, A. Coronetti4,5, W. Farabolini2, A. Gilardi2, R. Corsini2

1 University of Oslo, Norway
2 European Organization for Nuclear Research (CERN), Switzerland
3 University Clinic for Medical Radiation Physics, Medical Campus Pius Hospital, Carl von Ossietzky University, Germany
4 CERN, Switzerland
5 University of Jyväskylä, Finland


Single Event Effects (SEEs) induced by high energy pulsed electrons in a ESA SEU monitor are discussed. Measurements with high-energy electrons have been performed at VESPER (CERN) focusing on instantaneous fluxes and dose rates.

A. Feeley1, Y. Xiong1, N. Pieper1, D. Ball1, B. Bhuva1

1 Vanderbilt University, USA

SE rates for a 7-nm bulk FinFET node are investigated at NTV supply voltage for different VT options. Results show minimal differences at close-to-nominal voltages, and that LVT had lowest SEU cross-section at NTV.


C. Martinella1,2,3, P. Natzke2, R. García Alía3, Y. Kadi3, U. Grossner2, A. Javanainen1

1 University of Jyväskylä, Finland
2 APS - ETH Zurich, Switzerland
3 CERN, Switzerland


Heavy-ions induced latent damage in SiC power MOSFETs, involving the gate oxide and the SiC crystal lattice. The failure site was investigated using plasma SEM-FIB analysis. An overview of the heavy-ion SEEs is given.



Session Chair:

Steven Witczak, Northrop Grumman

D. Truyen1, E. Leduc1, L. Montagner1, M. Briet1, A. Collange1

1 Microchip Technology, France

This work presents a new approach for predictive SEL modeling by neural networks, covering the CMOS technology nodes from 500nm down to 22nm. The SEL model is validated by experimental results.


S. Alberton1, N. Medina1, N. Added1, V. Aguiar1, M. Guazzelli2, R. Baginski2

1 Universidade de São Paulo, lnstituto de Física, Brazil
2 Centro Universitário FEI, Brazil


The Lackners' theory for avalanche multiplication provides physical interpretation for the model parameters, although obtaining them through experimental methods is necessary. Comparing computational simulations and experimental measurements, the Lackners' impact ionization coefficients were estimated.


X. Zhou1, Y. Jia1, D. Hu1, Y. Wu1, Y. Zhao1

1 Beijing University of Technology, China

This paper presents the experimental characterization of SiC MOSFETs exposed to the heavy­-ion irradiation. Different leakage paths related to the drain bias used during the tests are observed, suggesting different damage sites in the devices, which can be further verified through the post-irradiation measurements. TCAD simulations are utilized to explore the failure mechanisms.


N. Pieper1, Y. Xiong1, A. Feeley1, G. Walker1, B. Bhuva1, R. Fung2, S. Wen2

1 Vanderbilt University, USA
2 Cisco, USA


Location and temperature characteristics of micro-latchups at the 7-nm bulk FinFET technology are investigated. Thermal images show that micro-latchup locations are spatially clustered and are removed serially when supply voltage is reduced.


K. Røed1, D. Eriksen2, B. Ceccaroli2, C. Martinella3, A. Javanainen3, S. Reshanov4, S. Massetti5

1 University of Oslo, Norway
2 Isosilicon AS, Norway
3 University of Jyväskylä, Finland
4 II-VI Kista AB, Sweden
5 ESA-ESTEC, Netherlands


The radiation tolerance of isotopic enriched and natural SiC JBS diodes are compared under heavy ion irradiation. The results indicate a marginally lower onset of degradation events for the monoisotopic type under reverse biased conditions.