Technical Session B


RADECS 2021 - Preliminary Technical Program

Tuesday, September 14, 2021 (starts at 13.30 h)

RADECS 2021 - Session B

Radiation Effects on Devices & ICs

Session Co-Chair:

Salvatore Danzeca, CERN
Cedric Virmontois, CNES


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H. Dewitte1, P. Paillet 2, S. Rizzolo3, C. Marcandella2, V Goiffon1

2CEA, France
3Airbus Defense and Space S.A.S, France


The abstract investigates the apparition after irradiation and the fast ambient temperature annealing of a leakage current in p-MOS structures. In particular, it discusses the origin of the current, the effect of the bias, and the dose rate.

T. Ma1, S. Bonaldo1, S. Mattiazzo2, A. Baschilotto3, C. Enz4 , A. Paccagnella5, S. Gerardin6

1University of Padova, ltaly
2INFN and University of Bergamo, ltaly
3INFN and University of Milano Bicocca, Israel
4Institute of Microengineering, EPFL, Switzerland
5INFN and University of Padova, ltaly
6DEI - Padova University, ltaly


TID-induced sample-to-sample variability is investigated in 16 nm bulk nFinFETs. The sample­ to-sample variability increases significantly at ultra-high doses, due to the impact of random dopant fluctuations.



M. Basso1, A. Danesi1, S. Bertaiola1. A. Veggetti1, A. Andreini1, P. Galbiati1

1STMicroelectronics, ltaly


xray effects on BCD platform are studied. Strong dependence of the BVdss vs.radiation dose is found. The impact is correlated with the doping:a typical behavior of ReSurF devices and is equivalent to additional charge inside the drain.


D. Sotskov1. A. Kuznetsov1, V. Elesin1, I. Selishchev1, V. Kotov1, A. Nikiforov1

1National Research Nuclear University MEPhl (Moscow Engineering Physics Institute), Russian Federation

This paper explores effects of neutron-induced displacement damage on static and high frequency parameters of three types SiGe:C npn-heterostructure bipolar transistors from the SGB25V BiCMOS technology.