Salvatore Danzeca, CERN
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H. Dewitte1, P. Paillet 2, S. Rizzolo3, C. Marcandella2, V Goiffon1
3Airbus Defense and Space S.A.S, France
The abstract investigates the apparition after irradiation and the fast ambient temperature annealing of a leakage current in p-MOS structures. In particular, it discusses the origin of the current, the effect of the bias, and the dose rate.
T. Ma1, S. Bonaldo1, S. Mattiazzo2, A. Baschilotto3, C. Enz4 , A. Paccagnella5, S. Gerardin6
1University of Padova, ltaly
2INFN and University of Bergamo, ltaly
3INFN and University of Milano Bicocca, Israel
4Institute of Microengineering, EPFL, Switzerland
5INFN and University of Padova, ltaly
6DEI - Padova University, ltaly
TID-induced sample-to-sample variability is investigated in 16 nm bulk nFinFETs. The sample to-sample variability increases significantly at ultra-high doses, due to the impact of random dopant fluctuations.
M. Basso1, A. Danesi1, S. Bertaiola1. A. Veggetti1, A. Andreini1, P. Galbiati1
xray effects on BCD platform are studied. Strong dependence of the BVdss vs.radiation dose is found. The impact is correlated with the doping:a typical behavior of ReSurF devices and is equivalent to additional charge inside the drain.
D. Sotskov1. A. Kuznetsov1, V. Elesin1, I. Selishchev1, V. Kotov1, A. Nikiforov1
1National Research Nuclear University MEPhl (Moscow Engineering Physics Institute), Russian Federation
This paper explores effects of neutron-induced displacement damage on static and high frequency parameters of three types SiGe:C npn-heterostructure bipolar transistors from the SGB25V BiCMOS technology.