Salvatore Danzeca, CERN
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H. Dewitte1, P. Paillet 2, S. Rizzolo3, C. Marcandella2, V Goiffon1
1 ISAE-SUPAERO, France
2 CEA, France
3 Airbus Defense and Space S.A.S, France
The abstract investigates the apparition after irradiation and the fast ambient temperature annealing of a leakage current in p-MOS structures. In particular, it discusses the origin of the current, the effect of the bias, and the dose rate.
T. Ma1, S. Bonaldo1, S. Mattiazzo2,5, A. Baschilotto3,5, C. Enz4 , A. Paccagnella1,5, S. Gerardin6
1 University of Padova, ltaly
2 University of Bergamo, ltaly
3 University of Milano Bicocca, Israel
4 Institute of Microengineering, EPFL, Switzerland
5 INFN, ltaly
6 DEI - Padova University, ltaly
TID-induced sample-to-sample variability is investigated in 16 nm bulk nFinFETs. The sample-to-sample variability increases significantly at ultra-high doses, due to the impact of random dopant fluctuations.
Steven Witczak, Northrop Grumman
M. Basso1, A. Danesi1, S. Bertaiola1. A. Veggetti1, A. Andreini1, P. Galbiati1
1 STMicroelectronics, ltaly
Xray effects on BCD platform are studied. Strong dependence of the BVdss vs.radiation dose is found. The impact is correlated with the doping a typical behavior of ReSurF devices and is equivalent to additional charge inside the drain.
D. Sotskov1, A. Kuznetsov1, V. Elesin1, I. Selishchev1, V. Kotov1, A. Nikiforov1
1 National Research Nuclear University MEPhl (Moscow Engineering Physics Institute), Russian Federation
This paper explores effects of neutron-induced displacement damage on static and high frequency parameters of three types SiGe:C npn-heterostructure bipolar transistors from the SGB25V BiCMOS technology.
S. Bonaldo1, M. Gorchichko2, E. Zhang2, T. Ma1, S. Mattiazzo3, M. Bagatin1, A. Paccagnella1, S. Gerardin1, R. Schrimpf2, R. Reed2, D. Linten4, J. Mitard4, D. Fleetwood2
1 University of Padova, Italy
2 Vanderbilt University, USA
3 University of Bergamo, Italy
4 Imec, Belgium
Gate-all-around Si nanowire FETs are characterized by DC and low frequency noise measurements at ultra-high doses up to 300 Mrad(SiO2). Worst-case TID degradation is observed for long-channel pGAAFETs.