Technical Session A


RADECS 2021 - Technical Program

Tuesday, September 14, 2021 (starts at 09.10 h)

RADECS 2021 - Session A

Basic Mechanisms of Radiation Effects

Session Co-Chair:

Damien Lambert, CEA
Michael King, SANDIA National Labs


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S. Toguchi1, E. Zhang1, M. Rony1, X. Luo1, D. Fleetwood1, R. Schrimpf1, M. Alles1, S. Moreau2, S. Cheramy2, P. Batude2, L. Brunet2, F. Andrieu2

1 Vanderbilt University, USA
2 CEA-LETI, France


3D-sequentially integrated transistors show strong layer-to-layer coupling of total-ionizing-dose responses due to radiation-induced trapped charges in the intermediate dielectric region between upper and lower device layers.

S. Bonaldo1, T. Ma1, S. Mattiazzo2, A. Baschirotto3, C. Enz4, D. Fleetwood5, A. Paccagnella1, S. Gerardin1

1 University of Padova, Italy
2 University of Bergamo, Italy
3 University of Milano, Italy
4 EPFL, Switzerland
5 Vanderbilt University, USA


DC and low frequency noise measurements on 16 nm Si bulk FinFETs irradiated to 1 Grad(SiO2) show charge buildup in STI. The TID sensitivity depends on channel length, and fin and finger number.


O. Coi1,2,3, G. Di pendina1, O. Garello1, D. Dangla2, R. Ecoffet2, L. Torres3

1 CEA, France
2 CNES, France
3 University of Montpellier, LIRMM, CNRS, France

This paper aims to investigate proton irradiation effects on a new class of emerging devices: Perpendicular- Magnetic Anysotropy (PMA) Spin Orbit (SOT) Torque Magnetic Tunnel Junctions (MTJ).



Session Chair:

Steven Witczak, Northrop Grumman

F. Palomo Pinto1, M. Moll2, M. Fernández García3, R. Montero Santos4, I. Vila Álvarez3

1 Universidad de Sevilla, Spain
2 CERN, Switzerland
3 Instituto de Física de Cantabria, Spain
4 SGIker Laser Facility, Spain


We analyze plasma effects due to the use of Two Photon Absorption-Transient Current Technique in silicon particle detectors. The Tobe-Seibt model gives a good agreement with the experimental observations.


M. Mitkova1, A. Simon1, Y. Sakaguchi2

1 Boise State University, USA
2 CROSS, Japan

Employing GexSe100-x glasses to monitor temperature using the phase change effect is reported. Materials selection, device structure and a prototype of temperature sensor performance are analysed. Heavy ion irradiation by Xe ions has been studied.


H. Hjalmarson1, S. Witczak2, R. Samuel3, H. Barnaby3, T. Buchheit1, R. van Ginhoven4

1 Sandia National Laboratories, USA
2 Northrup Grumman Corporation, USA
3 Arizona State University, USA
4 Air Force Research Laboratory, USA

A simplified approach to estimating radiation-induced Si-SiO2 interface trap densities, based on steady-state populations of relevant mobile species, is presented. Calculations are consistent with known trends in dose, dose rate, hydrogen content and temperature.