Damien Lambert, CEA
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S. Toguchi1, E. Zhang2, M. Rony3, X. Luo2, D. Fleetwood2, R. Schrimpf2, M. Alles2, S. Moreau4, S. Cheramy4, P. Batude4, L. Brunet4, F. Andrieu4
1Vanderbilt University, USA
2Vanderbilt University, USA
3Vnaderbilt University, USA
3D-sequentially integrated transistors show strong layer-to-layer coupling of total-ionizing-dose responses due to radiation-induced trapped charges in the intermediate dielectric region between upper and lower device layers.
S. Bonaldo1, T. Ma1, S. Mattiazzo2, A. Baschirotto3, C. Enz4, D. Fleetwood5, A. Paccagnella1, S. Gerardin1
1University of Padova, Italy
2University of Bergamo, Italy
3University of Milano, Italy
5Vanderbilt University, USA
DC and low frequency noise measurements on 16 nm Si bulk FinFETs irradiated to 1 Grad(SiO2) show charge buildup in STI. The TID sensitivity depends on channel length, and fin and finger number.
O. Coi1, G. Di pendina2, O. Garello2, D. Dangla3, R. Ecoffet3, L. Torres4
4University of Montpellier, LIRMM, CNRS, France
This paper aims to investigate proton irradiation effects on a new class of emerging devices: Perpendicular- Magnetic Anysotropy (PMA) Spin Orbit (SOT) Torque Magnetic Tunnel Junctions (MTJ).
F. Palomo_pinto1, M. Moll2, M. Fernández garcía3, R. Montero santos4, I. Vila Álvarez3
1Universidad de Sevilla, Spain
3Instituto de Física de Cantabria, Spain
4SGIker Laser Facility, Spain
We analyze plasma effects due to the use of Two Photon Absorption-Transient Current Technique in silicon particle detectors. The Tobe-Seibt model gives a good agreement with the experimental observations.
M. Mitkova1, A. Simon1, Y. Sakaguchi2
1Boise State University, USA
Employing GexSe100-x glasses to monitor temperature using the phase change effect is reported. Materials selection, device structure and a prototype of temperature sensor performance are analysed. Heavy ion irradiation by Xe ions has been studied.
H. Hjalmarson1, S. Witczak2, R. Samuel3, H. Barnaby3, T. Buchheit4, R. Van ginhoven5
1Sandia Natl Labs, USA
2Northrup Grumman Corporation, USA
3Arizona State University, USA
4Sandia National Laboratories, USA
5Air Force Research Laboratory, USA
A simplified approach to estimating radiation-induced Si-SiO2 interface trap densities, based on steady-state populations of relevant mobile species, is presented. Calculations are consistent with known trends in dose, dose rate, hydrogen content and temperature.