Technical Session D

RADECS 2021

RADECS 2021 - Preliminary Technical Program

Thursday, September 16, 2021 (starts at 9.10 h)

RADECS 2021 - Session D

Single Event Effects: Devices & ICs

Session Co-Chair:

Andrey Yanenko, SPELS / NRNU MEPhl
Juan Cueto Rodriguez, Thales Alenia Space

ORAL PRESENTATIONS

[please click at the header to open the details]

M. Rezaei1, A. Arinero panduro2, F. Franco2, J. Fabero3, H. Mecha4, M. Letiche5, H. Puchner6, J. Clemente7

1Universidad Complutense de Madrid / Departamento de Arquitectura de Computadores y Automática / Facultad de lnformática, Spain
2Universidad Complutense de Madrid, Spain
3Complutense University of Madrid, Spain
4UCM, Spain
5Institut Laue Langevin, France
6Infineon Technologies, USA
7Universidad Complutense Madrid, Spain

 

An experimental study an the cell-to-cell sensitivity of 65-nm, 90-nm and 130-nm volatile bulk COTS SRAMs to thermal neutron irradiation is presented. Results show a dependency between VDR and the number of bitflips after irradiation.


M. Trindade1, J. Brum1, L. Maldaner1, R. Garibotti2, L. Ost3, R. Possamai bastos1

1Laboratoire TIMA, France
2School of Technology, Pontifical Catholic University of Rio Grande do Sul, Brazil
3Loughborough University, United Kingdom

 

This paper compares the effectiveness of three machine learning models running on a low­ processor under neutron radiation. Results suggest that our implementations retain a certain level of effectiveness even without mitigation techniques.


F. Benevenuti1, M. Gonçalves1, E. Pereira jr2, R. Galhardo vaz2, O. Gonçalez2, J. Azambuja1, F. Lima kastensmidt1

1Universidade Federal do Rio Grande do Sul, Brazil
2Departamento de Ciência e Tecnologia Aeroespacial, Brazil

 

This work evaluates neutron-induced SEUs in image classification all-convolutional neural networks implemented an SRAM-based FPGA: one running in softcore GPU and one in HLS design. Reliability, area, execution time and power are discussed.


 

POSTERS

N. Guibbaud1, F. Miller1, T. Colladant2

1NUCLETUDES, France
2DGA, France

 

In this paper we propose to measure Single-Event Transient (SET) cross section on the clock tree resources of FPGA towards radiations.


 

Z. Li1, L. Berti2, B. Vignon2, P. Leroux3

1IMEC/ KU LEUVEN, Belgium
2IMEC, Belgium
3Leuven University, Belgium


This paper SET charge measurement circuits and results for a commercial 65 nm CMOS technology. The chip has been tested under the heavy-ion beam with an effective LET from 20.4 to 88.35 MeVcm2/mg.


 

T. Kraemer sarzi sartori1, H. Fourati2, M. Garay trindade3, R. Possamai bastos3

1UGA/TIMA/GIPSA-Lab, France
2UGA/GIPSA -Lab, France
3UGA/TIMA, France

 

This paper assesses the effectiveness of an Attitude Estimation (AE) processing system in tolerating neutron radiation-induced soft errors. Radiation tests have been conducted on an advanced AE algorithm running on a processing system neutron radiation.


 

J. Badia1, G. Leon1, J. Belloch2, A. Lindoso2, M. Garcia-valderas2, L. Entrena2

1Universitat Jaume I de Castellón, Spain
2Universidad Carlos III de Madrid, Spain
 

In this paper we evaluate the influence of the parallelization strategy on the proton radiation reliability of LU decomposition on a GPU-accelerated System-on-Chip. More intensive utilization of GPU resources produce larger cross-sections.


 

S. Houssany1, N. Guibbaud1, F. Miller1, T. Cheviron1, T. Colladant2

1Nuclétudes, France
2DGA, France

 

An experimental test approach to sort the different kinds of SEFI in microprocessors is presented. lt relies on the configuration and use of the interrupt handler combined with an external watchdog.


 

E. Mrozovskaya1, P. Chubunov1, S. lakovlev2, G. Zebrev1

1National Research Nuclear University MEPhl, Russian Federation
2JSC Institute of Space Device Engineering, Russian Federation

 

The Single Event Latchup cross sections as functions of LET in different CMOS circuits were experimentally investigated at different temperatures. A simplified simulation method for the SEL cross section temperature dependence is proposed and validated.