Technical Session DW

RADECS 2021

RADECS 2021 - Preliminary Technical Program

Thursday, September 16, 2021 (starts at 15.30 h)

RADECS 2021 - Session DW

Data Workshop

Session Co-Chair:

Jan Budroweit, German Aerospace Center (DLR)
Gregory Allen, NASA Jet Propulsion Laboratory, California

POSTERS

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M. Strackx1, B. Van bockel2, A. Karmakar2, S. Ali1, B. Boons1, R. Van dyck1, H. Marien1, Y. Cao1, P. Leroux2, J. Prinzie2

1MAGICS Instruments, Belgium
2KU Leuven, Belgium

 

A fully integrated radiation-hard all-digital frequency synthesizer is presented. Single-event monitoring of the phase-locked-loop is proposed by comparing the time-to-digital-converter output with an adjustable threshold. The validated radiation tolerance reaches 1kGy TID and 62.5MeV·cm2/mg SEL/SEU.


 

R. Pilia1, R. Espinasse1, C. Poulet1, F. Bezerra2, L. Gillot2, B. Treuillard3, S. Dumortier4

1EREMS, France
2CNES, France
3Michrochip Technology, France
4Microchip Technology, France

 

This paper reports results and analysis of Single Event Effects (SEE) test campaign conducted by CNES and EREMS. The DUT used for the study was the SAM3XBERT Microcontroller from Microchip.


 

G. Giakoustidis1

1University of Bonn, Germany

 

A Belle II PXD DEPFET module was irradiated using a 40 kV X-ray tube. Effects of FET threshold shifts and unexpectedly increasing bulk currents were observed and investigated to doses up to 165 kGy.


 

O. Bonnet1, R. Pilard1, S. Pelé1

1Teledyne e2v, France

 

The EV12AQ600, a quad channel 12-bit 1.6GSps ADC, was submitted to an heavy ions test, in order to evaluate its sensibility to Single Event Effect up to a LET of 67 MeV.cm2/mg.


 

R. Sharp1, J. Voegtli1, E. Bradley2

1Radtest Ltd, United Kingdom
2University of the West of England, United Kingdom

 

1,000 LM239N quad comparators (two manufacturers, ten date codes) have undergone TID testing to improve the definition of the optimum sample size for such a test. This paper presents the raw results of the work.


 

B. Tanios1, M. Kaddour1, B. Forgerit1, F. Guerre1, C. Poivey2

1Alter Technology TÜV Nord France, France
2European Space Agency (ESA/ESTEC), Netherlands

 

This work presents a comparative study of Single Event Effects (SEE) radiation sensitivity of two COTS (commercial off-the-shelf) 55-65nm NOR flash memories for space applications.


 

B. Tanios1, M. Rousselet1, F. Lochon1, B. Forgerit1, F. Guerre1, C. Poivey2

1Alter Technology TÜV Nord France, France
2European Space Agency (ESA/ESTEC), Netherlands

 

This work presents a comparative study of Single Event Effects (SEE) radiation sensitivity of two COTS (commercial off-the-shelf) 24-36nm NAND flash memories for space applications.


 

M. Wind1, C. Tscherne1, M. Bagatin2, S. Gerardin2, L. Huber1, M. Latocha1, A. Paccagnella2, M. Poizat3, P. Beck3

1Seibersdorf Labor GmbH, Austria
2University of Padova, ltaly
3ESA, Netherlands

 

We present TID radiation response test data of commercial multiplexers as part of the ESA CORHA study that investigates relevant COTS components and finally aims to formulate a test-data based ad-hoc RHA approach for COTS.


 

G. Bourg cazan1, J. Bernard1, S. Furic1, E. Leduc2, A. Solere3

1Microchip Technology Nantes, France
2Microchip A & D, France
3Microchip Technology Rousset, France

 

This paper reports the results of Single Event Effects (SEE) and Total lonizing Dose (TID) test campaigns conducted by Microchip on the ARM® Cortex® M7 SAMRH71F20C Microcontroller


 

W. Newman1, N. Van vonno1, S. Singer2, P. Lawrence2, E. Thomson2

1Renesas Electronics America, USA
2Renesas, USA

 

The ISL71xxxM/SLHM family of radiation-tolerant and radiation-hardened plastic-package ICs is designed to support the emerging constellations of small satellites that will provide high­ speed internet connections to millions of users in communities, governments, and businesses worldwide.


 

P. Wang1, P. Kohler1, A. Bosser1, L.Thibaut2, G. Duran cardenas2, L. Frederic2

13D PLUS, France
2Alter Technology France, France

 

This paper presents the results of a 256Mb SPI/QSPI non-volatile memory (NVM) SEE characterization. Destructive failures were observed during SEE tests, and the DUT shows sensitivity especially in standby mode instead of Erase/Write/Read modes.


 

B. Tanios1, O. Perrotin1, B. Forgerit1, F. Tilhac1, F. Guerre1, C. Poivey2

1Alter Technology TÜV Nord France, France
2ESA, Netherlands

 

This work presents a comparative study of Total lonizing Dose (TID) radiation sensitivity of five COTS (commercial off-the-shelf) 24-45nm NANO flash memories for space applications .


 

B. Treuillard1, S. Furic1, G. Bourg cazan1, E. Leduc2, P. Fournier3

1Microchip Technology Nantes, France
2Microchip A & D, France
3Microchip Technology Rousset, France

 

This paper reports the results of Single Event Effects (SEE) and Total lonizing Dose (TID) test campaigns conducted by Microchip on VSC8541RT Single Port Gigabit Ethernet PHY


 

A. Kalashnikova1, T. Maksimenko2, A. Koziukov3, P. Chubunov2, M. Kuznetsov2, R. Mangushev2, A. Drokin2, K. Bu-khasan2, N. Bondarenko2, M. Vyrostkov2, A. Nilov2, M. Maltseva2, N. ll'yin2, A. Kukharev2

1Branch of Joint - Stock Company "United Racket and Space Corporation"- "Institute of Space Device Engineering" (Branch of JSC URSC - ISDE), Russian Federation
2Branch of Joint - Stock Company "United Racket and Space Corporation"- "Institute of Space Device Engineering" (Branch of JSC URSC - ISDE). Russian Federation
3Branch of JSC URSC - ISDE, Russian Federation

 

The article presents the results of single event effect (SEE) testing samples of various representatives of analog microcircuits: operational amplifiers (OpAmp), relays, voltage regulators and transistor.


 

A. Koziukov1, P. Chubunov1, S. Iakovlev1, L. Arutunyan1, M. Shekhovtsov1, A. Riabtseva1

1Branch of JSC "URSC" - " ISDE", Russian Federation


The article presents the test results of digital microcircuits of the SNJ54 series for resistance to heavy ions obtained on the test means to monitor resistance to heavy ion space.