Damien Lambert, CEA
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S. Toguchi1, E. Zhang1, M. Rony1, X. Luo1, D. Fleetwood1, R. Schrimpf1, M. Alles1, S. Moreau2, S. Cheramy2, P. Batude2, L. Brunet2, F. Andrieu2
1 Vanderbilt University, USA
2 CEA-LETI, France
3D-sequentially integrated transistors show strong layer-to-layer coupling of total-ionizing-dose responses due to radiation-induced trapped charges in the intermediate dielectric region between upper and lower device layers.
S. Bonaldo1, T. Ma1, S. Mattiazzo2, A. Baschirotto3, C. Enz4, D. Fleetwood5, A. Paccagnella1, S. Gerardin1
1 University of Padova, Italy
2 University of Bergamo, Italy
3 University of Milano, Italy
4 EPFL, Switzerland
5 Vanderbilt University, USA
DC and low frequency noise measurements on 16 nm Si bulk FinFETs irradiated to 1 Grad(SiO2) show charge buildup in STI. The TID sensitivity depends on channel length, and fin and finger number.
O. Coi1,2,3, G. Di pendina1, O. Garello1, D. Dangla2, R. Ecoffet2, L. Torres3
1 CEA, France
2 CNES, France
3 University of Montpellier, LIRMM, CNRS, France
This paper aims to investigate proton irradiation effects on a new class of emerging devices: Perpendicular- Magnetic Anysotropy (PMA) Spin Orbit (SOT) Torque Magnetic Tunnel Junctions (MTJ).
Steven Witczak, Northrop Grumman
F. Palomo Pinto1, M. Moll2, M. Fernández García3, R. Montero Santos4, I. Vila Álvarez3
1 Universidad de Sevilla, Spain
2 CERN, Switzerland
3 Instituto de Física de Cantabria, Spain
4 SGIker Laser Facility, Spain
We analyze plasma effects due to the use of Two Photon Absorption-Transient Current Technique in silicon particle detectors. The Tobe-Seibt model gives a good agreement with the experimental observations.
M. Mitkova1, A. Simon1, Y. Sakaguchi2
1 Boise State University, USA
2 CROSS, Japan
Employing GexSe100-x glasses to monitor temperature using the phase change effect is reported. Materials selection, device structure and a prototype of temperature sensor performance are analysed. Heavy ion irradiation by Xe ions has been studied.
H. Hjalmarson1, S. Witczak2, R. Samuel3, H. Barnaby3, T. Buchheit1, R. van Ginhoven4
1 Sandia National Laboratories, USA
2 Northrup Grumman Corporation, USA
3 Arizona State University, USA
4 Air Force Research Laboratory, USA
A simplified approach to estimating radiation-induced Si-SiO2 interface trap densities, based on steady-state populations of relevant mobile species, is presented. Calculations are consistent with known trends in dose, dose rate, hydrogen content and temperature.