RADHARD

Radiation Hardness Assurance

Radiation Effects from the Perspective of Analog IC Designer – Radiation-Hard-by-Design

Alicja Michalowska-Forsyth, Varvara Bezhenova
Graz University of Technology, Institute of Electronics, Graz, Austria

Abstract

In space-borne, medical and high energy physics applications, the heart of a measurement system is usually an Integrated Circuit (IC). More and more often Application-Specific Integrated Circuits (ASICs) are used instead of fromthe-shelve products: ASIC offers lower power consumption than a standard IC or a discrete solution; also, higher measurement precision can be achieved, thanks to small capacitances and high speed, combined with a customized architecture.

This talk focuses on Total Ionizing Dose (TID) effects on integrated circuits (IC) and prospects for their mitigation through Radiation-Hard-by-Design (RHBD) techniques. It also discusses the radiation-hardened ASIC design flow, in particular emphasizing the issues of efficient irradiation tests and characterization of the integrated test structures.

References

R.D. Schrimpf, D.M. Fleetwood, “Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices”, Selected Topics in Electronics and Systems – Vol. 34, World Scientific, 2004

G.F. Knoll, “Radiation Detection and Measurement”, 4th ed., Wiley & Sons, 2010

V. Bezhenova, “Total Ionizing Dose Effects on CMOS Ring Oscillators”, MSc Thesis, Graz University of Technology, 2015

D. Pan, H. Li, B. Wilamowski, “A Radiation-Hard Phase-Locked Loop”, Proceedings IEEE ISIE, Vol. 2, June 2003

C. Enz, C.C. Temes, “Circuit Techniques for Reducing the Effects of Op-Amp Imperfections: Autozeroing, Correlated Double Sampling, and Chopper Stabilization”, Proceedings of the IEEE, Vol. 84, No. 11, Nov. 1996

J. Lin, C. Duvvury, B. Haroun, I. Oguzman, A. Somayaji, “A Fail-Safe ESD Protection Circuit with 230 fF Linear Capacitance for High-Speed/High-Precision 0.18 µm CMOS I/O Applications”, IEDM’02 International, IEEE, 2002

Acknowledgements

The authors gratefully acknowledge the support of research projects at the Institute of Electronics by: The Austrian Science Fund (FWF), The Austrian Research Promotion Agency (FFG) and ams AG.