Radiation Hardness Assurance


Fundamentals of Laser Testing for Single-Event Effects

Vincent POUGET 1
1 Institute of Electronics and Systems, CNRS, University of Montpellier, France



The laser method for Single-Event Effects testing is based on the photoelectric interaction of a short and focused laser pulse with the semiconductor material of a device to mimic the transient and localized track of electron-hole pairs that is produced by primary or secondary ionizing particles from radiation environments. This talk introduces the fundamentals of the laser testing technique and review important experimental parameters and practical considerations, providing the required knowledge to understand the capabilities and limitations of the technique and to prepare a laser testing campaign. Typical use cases are illustrated and the question of correlation is briefly discussed.



[1]     D.H. Habing, « The Use of Lasers to Simulate Radiation-Induced Transients in Semiconductor Devices and Circuits », IEEE Trans. Nucl. Sci., vol. 12, p. 91, 1965

[2]     S.P. Buchner, D. Wilson, K. Kang et al., « Laser Simulation of Single Event Upset », IEEE Trans. Nucl. Sci., 34, p. 1228, 1987

[3]     V. Pouget, D. Lewis, H. Lapuyade, R. Briand, P. Fouillat, L. Sarger, M.‐C. Calvet, “Validation of Radiation Hardened Designs by Pulsed Laser Testing and SPICE Analysis”, Microelectronics Reliability, vol. 39, p. 931‐935, 1999

[4]     R. Jones, A.M. Chugg, C.M.S. Jones, P.H. Duncan, C.S. Dyer, C. Sanderson, “Comparison Between SRAM SEE Cross-Sections from Ion Beam Testing With Those Obtained Using a New Picosecond Pulsed Laser Facility”, IEEE Trans. Nucl. Sci., vol. 47-3, p. 539, 2000

[5]     V. Pouget, H. Lapuyade, P. Fouillat, D. Lewis, S. Buchner, “Theoretical Investigation on an Equivalent Laser LET”, Microelectronics Reliability, 41, p 1513, 2001.

[6]     D. Lewis, V. Pouget, F. Beaudoin, P. Perdu, H. Lapuyade, P. Fouillat, A. Touboul, “Backside laser testing for SET sensitivity evaluation”, IEEE Trans. Nucl. Sci., 48, p 2193, 2001

[7]     F. Miller, A. Luu, F. Prud’homme, P. Poirot, R. Gaillard, N. Buard, and T. Carrière, “Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing”, IEEE Trans. Nucl. Sci., vol 53-6, p. 3145, 2006

[8]     McMorrow D., Lotshaw W.T., Melinger J.S., Buchner S., Boulghassoul Y., Massengill L.W., and Pease R., "Three dimensional mapping of single-event effects using two-photon absorption", IEEE Trans. Nuc. Sci., vol. 50, pp. 2199-2207, 2003.

[9]     S. Buchner, F. Miller, V. Pouget, D. McMorrow, “Pulsed-Laser Testing for Single-Event Effects Investigations”, IEEE Trans. Nucl. Sci., vol 60-3, p. 1852, 2013