RADHARD 2019 - Abstract

Radiation Hardness Assurance

SRAM and Flash-based FPGA testing and mitigation solutions

Sterpone Luca
Politecnico di Torino, Italy



Radiation effects on VLSI technology are provoked when radiation particles such as neutrons, protons or heavy ions hit a sensitive region of the integrated circuits. Due to the progressive technology scaling, VLSI devices are becoming, more and more vulnerable to Single Event Effects (SEEs) and are subject to cumulative ionizing damage known as Total Ionization Dose (TID). This presentation will firstly describe the state-of-the-art methodologies used for analyzing the impact of radiation effects on modern SRAM and Flash-based FPGAs by means of Computer Aided Design (CAD) tools and secondly, it will describe the state-of-the-art CAD design techniques for their mitigation.


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